Panasonic 2SB892S-AE

Description
PNP Epitaxial Planar Silicon Transistor For Large-Current Switching Application
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Description
PNP Epitaxial Planar Silicon Transistor For Large-Current Switching Application
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Datasheet
Datasheet Summary
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PNP epitaxial planar silicon transistor for large-current switching applications such as power supplies, relay drivers, and automotive wiring. Housed in a 3-pin MP package measuring 6.0 mm × 4.7 mm. Rated for a collector-to-emitter voltage of 50 V, collector current of 2 A, and collector dissipation of 1 W. Features low saturation voltage with VCE(sat) up to 0.4 V at 1 A collector current and 50 mA base current. Junction temperature operates up to 150 °C. Meets AEC-Q200 qualification for automotive use.

Datasheet Summary
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PNP epitaxial planar silicon transistor for large-current switching applications such as power supplies, relay drivers, and automotive wiring. Housed in a 3-pin MP package measuring 6.0 mm × 4.7 mm. Rated for a collector-to-emitter voltage of 50 V, collector current of 2 A, and collector dissipation of 1 W. Features low saturation voltage with VCE(sat) up to 0.4 V at 1 A collector current and 50 mA base current. Junction temperature operates up to 150 °C. Meets AEC-Q200 qualification for automotive use.

Suppliers

Company
Product
Description
Supplier Links
 - 2SB892S-AE - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor For Large-Current Switching Application

PNP Epitaxial Planar Silicon Transistor For Large-Current Switching Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SB892S-AE
Polarity PNP
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