PNP silicon transistor for high-current switching applications, packaged in TO-3PML with a case temperature rating of 25°C and a maximum collector current of 12 A. It has a collector-to-emitter saturation voltage of 0.5 V maximum, a collector-to-emitter voltage rating of 50 V, and a gain-bandwidth product of 10 MHz. The device is classified with an hFE range of 70 to 280 at 1 A collector current, and supports a pulse collector current of 25 A. Junction temperature range extends from -55°C to +150°C.
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PNP silicon transistor for high-current switching applications, packaged in TO-3PML with a case temperature rating of 25°C and a maximum collector current of 12 A. It has a collector-to-emitter saturation voltage of 0.5 V maximum, a collector-to-emitter voltage rating of 50 V, and a gain-bandwidth product of 10 MHz. The device is classified with an hFE range of 70 to 280 at 1 A collector current, and supports a pulse collector current of 25 A. Junction temperature range extends from -55°C to +150°C.
