Panasonic TRANSISTORS - Transistors (BJT) - Single - 2SB14160RA 2SB14160RA

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004298-2SB14160RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 270MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MT-3-A1 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 300μA Typical Gain (hFE) (Min): 120 @ 1A, 4V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004298-2SB14160RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 270MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MT-3-A1 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 300μA Typical Gain (hFE) (Min): 120 @ 1A, 4V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - 2SB14160RA - 1004298-2SB14160RA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB14160RA
1004298-2SB14160RA
TRANSISTORS - Transistors (BJT) - Single - 2SB14160RA 1004298-2SB14160RA
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004298-2SB14160RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 270MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MT-3-A1 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 300μA Typical Gain (hFE) (Min): 120 @ 1A, 4V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004298-2SB14160RA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 270MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: MT-3-A1
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 300μA
Typical Gain (hFE) (Min): 120 @ 1A, 4V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB14160RA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB14160RA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB14160RA
TRANS PNP 60V 3A MT-3

TRANS PNP 60V 3A MT-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1004298-2SB14160RA 2SB14160RA
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB14160RA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
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