Panasonic 2SB1229T

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
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Datasheet
Datasheet Summary
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PNP Epitaxial Planar Silicon Transistor in a TO-92 package, designed for driver applications such as voltage regulators, relay drivers, and lamp drivers. The transistor has a collector-to-emitter voltage rating of 50 V, a collector current rating of 2 A, and a collector dissipation of 0.75 W. It features a low collector-to-emitter saturation voltage of up to 0.7 V at IC = 1 A and IB = 50 mA, a hFE current gain ranging from 200 to 400 for the T-rank variant, and a gain-bandwidth product of 150 MHz. Switching times are 60 ns for turn-on time and 30 ns for fall time. The junction temperature ranges from -55°C to 150°C.

Datasheet Summary
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PNP Epitaxial Planar Silicon Transistor in a TO-92 package, designed for driver applications such as voltage regulators, relay drivers, and lamp drivers. The transistor has a collector-to-emitter voltage rating of 50 V, a collector current rating of 2 A, and a collector dissipation of 0.75 W. It features a low collector-to-emitter saturation voltage of up to 0.7 V at IC = 1 A and IB = 50 mA, a hFE current gain ranging from 200 to 400 for the T-rank variant, and a gain-bandwidth product of 150 MHz. Switching times are 60 ns for turn-on time and 30 ns for fall time. The junction temperature ranges from -55°C to 150°C.

Suppliers

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Product
Description
Supplier Links
 - 2SB1229T - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SB1229T
Polarity PNP
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