Panasonic 2SB1136R

PNP epitaxial planar silicon transistor for high-current switching applications, in a TO-220ML package, with a collector-to-emitter voltage rating of -50 V, collector current of -12 A, and collector dissipation of 30 W at Tc=25°C. Features include a maximum collector-to-emitter saturation voltage of 0.4 V at -6 A collector current and -0.6 A base current, and a junction temperature rating of 150 °C. The device is classified by DC current gain in bins of 70-140, 100-200, or 140-280 at IC=1 A. Storage and operating temperature range is -55 °C to +150 °C.