Panasonic 50V 0.5A Bipolar Transistor 2SB1030ARA

Description
TRANS PNP 50V 0.5A NS-B1 Product overview: 2SB1030ARA from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1030ARA can be used for catalog matching and distributor lookup.
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Description
TRANS PNP 50V 0.5A NS-B1 Product overview: 2SB1030ARA from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1030ARA can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
50V 0.5A Bipolar Transistor
276-2SB1030ARA
50V 0.5A Bipolar Transistor 276-2SB1030ARA
TRANS PNP 50V 0.5A NS-B1 Product overview: 2SB1030ARA from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1030ARA can be used for catalog matching and distributor lookup.

TRANS PNP 50V 0.5A NS-B1 Product overview: 2SB1030ARA from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1030ARA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1030ARA - 1004262-2SB1030ARA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1030ARA
1004262-2SB1030ARA
TRANSISTORS - Transistors (BJT) - Single - 2SB1030ARA 1004262-2SB1030ARA
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004262-2SB1030ARA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 600mV @ 30mA, 300mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 120 @ 150mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004262-2SB1030ARA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 120MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: NS-B1
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 600mV @ 30mA, 300mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 120 @ 150mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1030ARA - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1030ARA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1030ARA
TRANS PNP 50V 0.5A NS-B1

TRANS PNP 50V 0.5A NS-B1

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 276-2SB1030ARA 1004262-2SB1030ARA 2SB1030ARA
Product Name 50V 0.5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SB1030ARA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IC(max) 500 milliamps 500 milliamps
VCEO 50 volts 50 volts
PD 300 milliwatts
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