Panasonic TRANSISTORS - Transistors (BJT) - Single - 2SB1030ARA 2SB1030ARA

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004262-2SB1030ARA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 120MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: NS-B1
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 600mV @ 30mA, 300mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 120 @ 150mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

TRANS PNP 50V 0.5A NS-B1 Product overview: 2SB1030ARA from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1030ARA can be used for catalog matching and distributor lookup.