Panasonic 2SA1824S-AY

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
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Datasheet
Datasheet Summary
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PNP epitaxial planar silicon transistor for switching applications, housed in the FLP package with dimensions of 10.5 mm by 4.5 mm. It has a collector-to-emitter voltage rating of 50 V, a continuous collector current of 5 A, and a power dissipation of 1.5 W. The device features a low collector-to-emitter saturation voltage of up to 280 mV at IC = -3 A, a gain-bandwidth product of 130 MHz, and a turn-on time of 50 ns. The DC current gain (hFE) ranges from 140 to 280 for the S grade at IC = -500 mA, with a junction temperature rating of 150 °C and storage temperature range from -55 to 150 °C.

Datasheet Summary
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PNP epitaxial planar silicon transistor for switching applications, housed in the FLP package with dimensions of 10.5 mm by 4.5 mm. It has a collector-to-emitter voltage rating of 50 V, a continuous collector current of 5 A, and a power dissipation of 1.5 W. The device features a low collector-to-emitter saturation voltage of up to 280 mV at IC = -3 A, a gain-bandwidth product of 130 MHz, and a turn-on time of 50 ns. The DC current gain (hFE) ranges from 140 to 280 for the S grade at IC = -500 mA, with a junction temperature rating of 150 °C and storage temperature range from -55 to 150 °C.

Suppliers

Company
Product
Description
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 - 2SA1824S-AY - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SA1824S-AY
Polarity PNP
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