The 2SA1786E is a PNP silicon transistor designed for high voltage driver applications, featuring a collector-to-emitter voltage rating of 400 V, a continuous collector current of 2 A, and a power dissipation of 1 W. It is housed in a 3-pin TO-92 package with dimensions of 6.9 mm in length and 2.54 mm between pin centers. The device has a DC current gain (hFE) range of 100 to 200 for the E rank, a gain-bandwidth product of 40 to 60 MHz, and a collector-to-emitter saturation voltage of up to 1.0 V at 500 mA collector current. Operating and storage junction temperatures range from -55°C to 150°C. The part meets no specified industry standards beyond general semiconductor reliability practices.
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The 2SA1786E is a PNP silicon transistor designed for high voltage driver applications, featuring a collector-to-emitter voltage rating of 400 V, a continuous collector current of 2 A, and a power dissipation of 1 W. It is housed in a 3-pin TO-92 package with dimensions of 6.9 mm in length and 2.54 mm between pin centers. The device has a DC current gain (hFE) range of 100 to 200 for the E rank, a gain-bandwidth product of 40 to 60 MHz, and a collector-to-emitter saturation voltage of up to 1.0 V at 500 mA collector current. Operating and storage junction temperatures range from -55°C to 150°C. The part meets no specified industry standards beyond general semiconductor reliability practices.
