PNP epitaxial planar silicon transistor for VHF converter and local oscillator applications, housed in a CP package measuring 5.0 mm × 5.1 mm × 5.0 mm. It has a collector-to-base voltage rating of -15 V, collector current of -50 mA, and power dissipation of 250 mW. The device features a typical gain-bandwidth product of 1.2 GHz, a power gain of 13 dB at 400 MHz, and an output capacitance of 1.0 pF. The junction temperature rating is 150°C, with storage temperature ranging from -55°C to +150°C. It is a complementary pair to the 2SC4269. The -3 suffix denotes an hFE rank of 60 to 120 at IC = -5 mA.
PNP Epitaxial Planar Silicon Transistor For Vhf Converter, Local Oscillator Applications
| Rochester Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 2SA1778-3-TB-E |
| Polarity | PNP |