Panasonic 2SA1773E-TL-E

Description
Transistor for High Voltage Driver
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Description
Transistor for High Voltage Driver
Request a Quote
Datasheet
Datasheet Summary
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The 2SA1773 is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V, a continuous collector current of 2 A, and a collector dissipation of 15 W at 25 °C case temperature. It is packaged in a TO-92-style case measuring 6.5 mm in height, 5.0 mm in width, and 2.3 mm in lead spacing. The E-grade variant has a DC current gain (hFE) of 100 to 200 at 100 mA collector current, a gain-bandwidth product of 60 MHz, a collector-to-emitter saturation voltage of 1.0 V at 500 mA collector current, and an output capacitance of 15 pF at 30 V collector-to-base voltage. The junction temperature ranges from -55 °C to 150 °C.

Datasheet Summary
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The 2SA1773 is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V, a continuous collector current of 2 A, and a collector dissipation of 15 W at 25 °C case temperature. It is packaged in a TO-92-style case measuring 6.5 mm in height, 5.0 mm in width, and 2.3 mm in lead spacing. The E-grade variant has a DC current gain (hFE) of 100 to 200 at 100 mA collector current, a gain-bandwidth product of 60 MHz, a collector-to-emitter saturation voltage of 1.0 V at 500 mA collector current, and an output capacitance of 15 pF at 30 V collector-to-base voltage. The junction temperature ranges from -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1773E-TL-E - Rochester Electronics
Newburyport, MA, United States
Transistor for High Voltage Driver

Transistor for High Voltage Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number 2SA1773E-TL-E
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