Panasonic 2SA1773E-E

Description
Transistor for High Voltage Driver Applications
Request a Quote
Description
Transistor for High Voltage Driver Applications
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 2SA1773E is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V and a continuous collector current of 2 A. It is housed in a TO-92 package with dimensions of 5.0 mm × 6.5 mm × 2.3 mm. The device has a DC current gain (hFE) range of 100 to 200, as designated by the E rank, and a gain-bandwidth product of 60 MHz. The junction temperature rating is 150 °C, and it operates within a storage temperature range of -55 °C to +150 °C. The transistor meets RoHS compliance and is intended for general electronics equipment, not for life-sustaining or safety-critical systems.

Datasheet Summary
Powered by GS/AI

The 2SA1773E is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V and a continuous collector current of 2 A. It is housed in a TO-92 package with dimensions of 5.0 mm × 6.5 mm × 2.3 mm. The device has a DC current gain (hFE) range of 100 to 200, as designated by the E rank, and a gain-bandwidth product of 60 MHz. The junction temperature rating is 150 °C, and it operates within a storage temperature range of -55 °C to +150 °C. The transistor meets RoHS compliance and is intended for general electronics equipment, not for life-sustaining or safety-critical systems.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1773E-E - Rochester Electronics
Newburyport, MA, United States
Transistor for High Voltage Driver Applications

Transistor for High Voltage Driver Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number 2SA1773E-E
Package Type TO-252 (DPAK); TO-252-3
Unlock Full Specs
to access all available technical data

Similar Products

CSD19505KCS 80V, N-Channel NexFET™ Power MOSFET - CSD19505KCS - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type TO-220
View Details
8 suppliers
1300A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K3 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details