Panasonic 2SA1773E-E

Description
Transistor for High Voltage Driver Applications
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Description
Transistor for High Voltage Driver Applications
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Datasheet
Datasheet Summary
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The 2SA1773E is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V and a continuous collector current of 2 A. It is housed in a TO-92 package with dimensions of 5.0 mm × 6.5 mm × 2.3 mm. The device has a DC current gain (hFE) range of 100 to 200, as designated by the E rank, and a gain-bandwidth product of 60 MHz. The junction temperature rating is 150 °C, and it operates within a storage temperature range of -55 °C to +150 °C. The transistor meets RoHS compliance and is intended for general electronics equipment, not for life-sustaining or safety-critical systems.

Datasheet Summary
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The 2SA1773E is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V and a continuous collector current of 2 A. It is housed in a TO-92 package with dimensions of 5.0 mm × 6.5 mm × 2.3 mm. The device has a DC current gain (hFE) range of 100 to 200, as designated by the E rank, and a gain-bandwidth product of 60 MHz. The junction temperature rating is 150 °C, and it operates within a storage temperature range of -55 °C to +150 °C. The transistor meets RoHS compliance and is intended for general electronics equipment, not for life-sustaining or safety-critical systems.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1773E-E - Rochester Electronics
Newburyport, MA, United States
Transistor for High Voltage Driver Applications

Transistor for High Voltage Driver Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number 2SA1773E-E
Package Type TO-252 (DPAK); TO-252-3
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