Panasonic 2SA1699E-AA

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
Request a Quote
Datasheet
Datasheet Summary
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The 2SA1699E-AA is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications. It is packaged in a TO-92 case with dimensions of 5.0 mm in length, 4.0 mm in width, and 2.0 mm in height. The device has a collector-to-base voltage rating of -400 V, a collector-to-emitter voltage rating of -400 V, and a maximum collector current of -200 mA. Continuous collector dissipation is rated at 600 mW with a maximum junction temperature of 150 °C. The hFE is classified in the range of 100 to 200, and the gain-bandwidth product is 70 MHz at VCE = -30 V and IC = -10 mA. The transistor meets the JEDEC TO-92 and EIAJ SC-43 package standards.

Datasheet Summary
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The 2SA1699E-AA is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications. It is packaged in a TO-92 case with dimensions of 5.0 mm in length, 4.0 mm in width, and 2.0 mm in height. The device has a collector-to-base voltage rating of -400 V, a collector-to-emitter voltage rating of -400 V, and a maximum collector current of -200 mA. Continuous collector dissipation is rated at 600 mW with a maximum junction temperature of 150 °C. The hFE is classified in the range of 100 to 200, and the gain-bandwidth product is 70 MHz at VCE = -30 V and IC = -10 mA. The transistor meets the JEDEC TO-92 and EIAJ SC-43 package standards.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1699E-AA - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SA1699E-AA
Polarity PNP
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