Panasonic 2SA1540E

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
Request a Quote
Datasheet
Datasheet Summary
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PNP epitaxial planar silicon transistor designed for high-definition CRT display video output applications, available in a TO-126 plastic package with dimensions 8.0 mm × 5.7 mm × 4.1 mm. Features a collector-to-base voltage rating of 200 V, collector-to-emitter voltage rating of 200 V, and a gain-bandwidth product of 300 MHz. Reverse transfer capacitance is specified at 1.8 pF. Maximum collector current is 100 mA, with peak current of 200 mA and collector dissipation of 1.3 W at ambient temperature. Junction temperature ranges from -55 °C to 150 °C. Complementary to the 2SC3955 NPN type. Classified by DC current gain (hFE) into grades, with the E grade rated between 100 and 200 at VCE = -10 V and IC = -10 mA.

Datasheet Summary
Powered by GS/AI

PNP epitaxial planar silicon transistor designed for high-definition CRT display video output applications, available in a TO-126 plastic package with dimensions 8.0 mm × 5.7 mm × 4.1 mm. Features a collector-to-base voltage rating of 200 V, collector-to-emitter voltage rating of 200 V, and a gain-bandwidth product of 300 MHz. Reverse transfer capacitance is specified at 1.8 pF. Maximum collector current is 100 mA, with peak current of 200 mA and collector dissipation of 1.3 W at ambient temperature. Junction temperature ranges from -55 °C to 150 °C. Complementary to the 2SC3955 NPN type. Classified by DC current gain (hFE) into grades, with the E grade rated between 100 and 200 at VCE = -10 V and IC = -10 mA.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1540E - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SA1540E
Polarity PNP
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