PNP epitaxial planar silicon transistor for ultrahigh-definition CRT display and video output applications, in a TO-126 package. It has a collector-to-base voltage rating of 200 V, collector-to-emitter voltage rating of 200 V, and a maximum collector current of 100 mA. The gain-bandwidth product is 400 MHz, and the reverse transfer capacitance is 1.7 pF. The DC current gain (hFE) is classified in the D range, between 60 and 120 at VCE = -10 V and IC = -10 mA. The collector-to-emitter saturation voltage is -0.8 V at IC = -30 mA and IB = -3 mA. Complementary to the 2SC3600 NPN transistor.
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PNP epitaxial planar silicon transistor for ultrahigh-definition CRT display and video output applications, in a TO-126 package. It has a collector-to-base voltage rating of 200 V, collector-to-emitter voltage rating of 200 V, and a maximum collector current of 100 mA. The gain-bandwidth product is 400 MHz, and the reverse transfer capacitance is 1.7 pF. The DC current gain (hFE) is classified in the D range, between 60 and 120 at VCE = -10 V and IC = -10 mA. The collector-to-emitter saturation voltage is -0.8 V at IC = -30 mA and IB = -3 mA. Complementary to the 2SC3600 NPN transistor.
