Panasonic 2SA1405E

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
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Datasheet
Datasheet Summary
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PNP epitaxial planar silicon transistor designed for ultrahigh-definition CRT display and video output applications, available in TO-126 package with dimensions of 8.0 mm × 4.0 mm. It features a collector-to-base voltage rating of −120 V, collector current of −300 mA, and a gain-bandwidth product of 500 MHz. Reverse transfer capacitance is 3.8 pF, and it operates with a maximum junction temperature of 150°C. This part is part of a complementary pair with the 2SC3599 and uses FBET process technology. It meets no specified industry standards beyond its electrical ratings.

Datasheet Summary
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PNP epitaxial planar silicon transistor designed for ultrahigh-definition CRT display and video output applications, available in TO-126 package with dimensions of 8.0 mm × 4.0 mm. It features a collector-to-base voltage rating of −120 V, collector current of −300 mA, and a gain-bandwidth product of 500 MHz. Reverse transfer capacitance is 3.8 pF, and it operates with a maximum junction temperature of 150°C. This part is part of a complementary pair with the 2SC3599 and uses FBET process technology. It meets no specified industry standards beyond its electrical ratings.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1405E - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SA1405E
Polarity PNP
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