Panasonic TRANSISTORS - Transistors (BJT) - Single - 2SA1309ARA 2SA1309ARA

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114515-2SA1309ARA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114515-2SA1309ARA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Suppliers

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Description
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TRANSISTORS - Transistors (BJT) - Single - 2SA1309ARA - 114515-2SA1309ARA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1309ARA
114515-2SA1309ARA
TRANSISTORS - Transistors (BJT) - Single - 2SA1309ARA 114515-2SA1309ARA
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114515-2SA1309ARA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 114515-2SA1309ARA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: NS-B1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 5mA, 50mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 210 @ 2mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1309ARA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1309ARA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1309ARA
TRANS PNP 50V 0.1A NS-B1

TRANS PNP 50V 0.1A NS-B1

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 114515-2SA1309ARA 2SA1309ARA
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SA1309ARA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
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