Panasonic 2SA1208T

PNP epitaxial planar silicon transistor for high-voltage switching and audio predriver applications, housed in a 3-pin miniature package measuring 6.0 mm × 5.0 mm with a lead spacing of 1.45 mm. The collector-to-base voltage is −180 V, collector-to-emitter voltage is −160 V, and the maximum collector current is 70 mA. Collector dissipation is 900 mW, with a maximum junction temperature of 150 °C. The DC current gain (hFE) is 200 to 400 for the T-rank variant. The gain-bandwidth product is 150 MHz, output capacitance is 2.0 pF at 1 MHz, turn-on time is 0.1 µs, and fall time is 0.2 µs.