Panasonic 2SA1208S-AE

PNP epitaxial planar silicon transistor for high-voltage switching and audio predriver applications, housed in a 3-pin SIP package measuring 6.0 mm × 5.0 mm with a lead pitch of 2.54 mm. Features a collector-to-base voltage rating of -180 V, collector-to-emitter voltage of -160 V, and continuous collector current of 70 mA, with a maximum power dissipation of 900 mW. Junction temperature rating is 150 °C. Exhibits a DC current gain (hFE) range of 100 to 200 for the S-grade variant, a gain-bandwidth product of 150 MHz at -10 V and -10 mA, output capacitance of 2.0 pF, and switching times of 0.1 µs turn-on and 0.2 µs fall time. Complies with SANYO's absolute maximum ratings and thermal specifications under standard operating conditions.