Panasonic 2SA1207T-AA

PNP epitaxial planar silicon transistor for high-voltage switching and AF 60 W predriver applications, housed in a 3-pin package measuring 5.0 mm × 4.0 mm with a lead spacing of 1.3 mm. Features a collector-to-base voltage rating of -180 V, collector-to-emitter voltage of -160 V, and a maximum collector current of 70 mA. Collector dissipation is 600 mW with a junction temperature rating of 150°C. DC current gain (hFE) ranges from 200 to 400 for the T-rank variant, with a gain-bandwidth product of 150 MHz and output capacitance of 2.0 pF. Switching times include a turn-on time of 0.1 µs and fall time of 0.2 µs. Complies with industrial reliability standards for general electronics use.