Panasonic 2SA1179-6-TB-E

PNP epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier applications, housed in a miniature CP package measuring 5.0 mm × 5.0 mm × 3.0 mm. It has a collector-to-base voltage rating of 55 V, collector-to-emitter voltage of 50 V, and maximum collector current of 150 mA. Collector dissipation is 200 mW, with a junction temperature rating of 150 °C. DC current gain (hFE) at VCE = -6 V and IC = 1 mA is classified in the 200 to 400 range for the -6 variant. Gain-bandwidth product is 180 MHz at VCE = -6 V and IC = -10 mA. Output capacitance is 3.0 pF at VCB = -6 V and f = 1 MHz. Collector-to-emitter saturation voltage is 0.15 V maximum at IC = -50 mA and IB = -5 mA.