Panasonic 12A01M-TL-E

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
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Datasheet
Datasheet Summary
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PNP epitaxial planar silicon transistor in an ultrasmall MCP package for low-frequency amplifier and small motor drive applications. The device has a collector-to-emitter voltage rating of 12 V, collector current of 500 mA, and collector dissipation of 300 mW when mounted on a glass-epoxy board (20×5×1.6 mm). It features a typical collector-to-emitter saturation voltage of 300 mV at IC = 200 mA and IB = 10 mA, and a DC current gain (hFE) ranging from 300 to 700 at IC = 10 mA. The junction temperature rating is 150 °C. The part meets no stated industry standards or qualifications.

Datasheet Summary
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PNP epitaxial planar silicon transistor in an ultrasmall MCP package for low-frequency amplifier and small motor drive applications. The device has a collector-to-emitter voltage rating of 12 V, collector current of 500 mA, and collector dissipation of 300 mW when mounted on a glass-epoxy board (20×5×1.6 mm). It features a typical collector-to-emitter saturation voltage of 300 mV at IC = 200 mA and IB = 10 mA, and a DC current gain (hFE) ranging from 300 to 700 at IC = 10 mA. The junction temperature rating is 150 °C. The part meets no stated industry standards or qualifications.

Suppliers

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Product
Description
Supplier Links
 - 12A01M-TL-E - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 12A01M-TL-E
Polarity PNP
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