UNRF1A400A is a silicon PNP pre-biased bipolar transistor in an ultraminiature ML3-N2 surface-mount package measuring 0.6 mm × 1.0 mm × 0.39 mm, designed for high-density digital circuits. It has a collector-base voltage rating of -50 V, collector current of -80 mA, and power dissipation of 100 mW. The transition frequency is 80 MHz, with a forward current transfer ratio (hFE) of 80 minimum at -10 V and -5 mA. Input resistance is 10 kΩ ±30%, and the resistance ratio R1/R2 is 0.17 to 0.25. It operates from -55°C to +125°C and complies with the RoHS Directive (EU 2002/95/EC).
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 80MHz 100mW Surface Mount ML3-N2
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | UNRF1A400ATR-ND |
| Product Name | Single, Pre-Biased Bipolar Transistors |
| Polarity | PNP |