Silicon NPN bipolar transistor for low-frequency output amplification, housed in the MT-2-A1 package, with a collector-emitter voltage rating of 10 V, collector current of 1 A, and power dissipation of 1 W. Features a collector-emitter saturation voltage of ≤ 0.15 V and forward current transfer ratio between 200 and 800. Transition frequency is 120 MHz. Complies with RoHS (EU 2002/95/EC).
Bipolar (BJT) Transistor NPN 10V 1A 120MHz 1W Through Hole MT-2-A1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SD235800ATB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
