Panasonic Industry Europe GmbH Single Bipolar Transistors 2SD1992A0A

NPN silicon bipolar transistor for low-frequency power amplification and drive, housed in an MT-1-A1 package with dimensions of 6.9±0.1 mm in length, 2.5±0.1 mm in width, and 1.05±0.05 mm in thickness. It has a collector-emitter voltage rating of 50 V, a collector current rating of 500 mA, and a collector power dissipation of 600 mW. The device exhibits a collector-emitter saturation voltage of 0.35 V to 0.60 V at a collector current of 300 mA and base current of 30 mA. The forward current transfer ratio ranges from 85 to 340 depending on the rank. The transition frequency is 200 MHz. It complies with the RoHS Directive (EU 2002/95/EC).