Panasonic Industry Europe GmbH Single Bipolar Transistors 2SD11490SL

Silicon NPN epitaxial planar transistor for low-frequency amplification, housed in a Mini3-G1 surface mount package. It has a collector-base voltage rating of 100 V, collector-emitter voltage of 100 V, emitter-base voltage of 15 V, continuous collector current of 20 mA, peak collector current of 50 mA, and collector power dissipation of 200 mW. The forward current transfer ratio (hFE) ranges from 400 to 1200 depending on rank, with a transition frequency of 100 MHz. The device complies with the RoHS Directive (EU 2002/95/EC).