The 2SD0946B is a silicon NPN epitaxial planar Darlington transistor for low-frequency amplification, housed in a TO-126B-A1 package. It has a collector-base voltage rating of 100 V, collector-emitter voltage of 80 V, and emitter-base voltage of 5 V. The maximum continuous collector current is 1 A, with a peak collector current of 1.5 A and power dissipation of 1.2 W. The collector-emitter saturation voltage is 1.8 V at 1 A collector current and 1 mA base current. The forward current transfer ratio (hFE) ranges from 8,000 to 20,000. It complies with the RoHS Directive. Transition frequency is 150 MHz. The package dimensions are 8.3 mm x 9.1 mm x 5.0 mm with a lead pitch of 2.3 mm and body thickness of 3.2 mm.
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 150MHz 1.2W Through Hole TO-126B-A1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SD0946B-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
