Silicon NPN epitaxial planar transistor for high-frequency amplification, oscillation, and mixing in a surface-mount SMini3-F2 package. The device has a maximum collector-base voltage of 30 V, collector-emitter voltage of 20 V, emitter-base voltage of 3 V, collector current of 50 mA, collector power dissipation of 150 mW, and a transition frequency of up to 1.6 GHz. It complies with the RoHS Directive (EU 2002/95/EC).
RF Transistor NPN 20V 50mA 1.6GHz 150mW Surface Mount SMini3-F2
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SC3932GTLTR-ND |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN |