Panasonic Industry Europe GmbH Single Bipolar Transistors 2SC1318ARA

Description
Bipolar (BJT) Transistor NPN 70V 500mA 120MHz 750mW Through Hole TO-92-B1
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Description
Bipolar (BJT) Transistor NPN 70V 500mA 120MHz 750mW Through Hole TO-92-B1
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Datasheet
Datasheet Summary
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2SC1318A is an NPN silicon bipolar transistor for low-frequency driver amplification in 25 W to 30 W output stages, packaged in TO-92-B1. It has a collector-emitter voltage rating of 70 V, collector current of 500 mA, and collector power dissipation of 750 mW. The transition frequency is 120 MHz, and the device complies with the RoHS Directive (EU 2002/95/EC).

Datasheet Summary
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2SC1318A is an NPN silicon bipolar transistor for low-frequency driver amplification in 25 W to 30 W output stages, packaged in TO-92-B1. It has a collector-emitter voltage rating of 70 V, collector current of 500 mA, and collector power dissipation of 750 mW. The transition frequency is 120 MHz, and the device complies with the RoHS Directive (EU 2002/95/EC).

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Single Bipolar Transistors - 2SC1318ARATB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC1318ARATB-ND
Single Bipolar Transistors 2SC1318ARATB-ND
Bipolar (BJT) Transistor NPN 70V 500mA 120MHz 750mW Through Hole TO-92-B1

Bipolar (BJT) Transistor NPN 70V 500mA 120MHz 750mW Through Hole TO-92-B1

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2SC1318ARATB-ND
Product Name Single Bipolar Transistors
Polarity NPN
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