ODG (Origin Data Global) Transistors RS9N65D

Description
650V 9A 950mΩ@10V,4.5A 170W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - RS9N65D - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
650V 9A 950mΩ@10V,4.5A 170W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - RS9N65D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
RS9N65D
Transistors RS9N65D
650V 9A 950mΩ@10V,4.5A 170W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

650V 9A 950mΩ@10V,4.5A 170W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RS9N65D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 37655850 - Radwell International
Fuji Electric Corp. of America
IGBT Module
6MBI100U4B-120-01
Specs
Transistor Type IGBT
View Details
80 V, 500 mA PNP general-purpose transistors - BC806-16HVL - Nexperia B.V.
Nexperia B.V.
80 V, 500 mA PNP general-purpose transistors
BC806-16HVL
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
Transistor Grade / Operating Range Automotive
View Details
5 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R020M1 - AIMBG120R020M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R020M1
AIMBG120R020M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS - SK-H1-QOUT-E460 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS
SK-H1-QOUT-E460
Specs
Transistor Type IGBT
View Details