ODG (Origin Data Global) Single Bipolar Transistors NTE182

The NTE182 is an NPN silicon transistor in a TO-127 package designed for general purpose amplification and switching. It has a collector-emitter voltage rating of 60V, a collector current rating of 10A, and a total device dissipation of 90W at 25°C. The thermal resistance from junction to case is 1.39°C/W, and the operating junction temperature range is -55°C to +150°C. The transistor exhibits a minimum current gain-bandwidth product of 2MHz at 500mA collector current, with DC current gain ranging from 20 to 100 at 4A collector current and 5.0 at 10A. Base-emitter on voltage is up to 1.8V at 4A, and collector-emitter saturation voltage is up to 1.1V at 4A collector current and 400mA base current.