ODG (Origin Data Global) Transistors MJ3055

Description
TO-3 Bipolar (BJT) ROHS
  • Transistors - MJ3055 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
TO-3 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - MJ3055 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
MJ3055
Transistors MJ3055
TO-3 Bipolar (BJT) ROHS

TO-3 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MJ3055
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor - QPD1020 - Qorvo
Qorvo
30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor
QPD1020
Specs
Transistor Technology / Material GaN
Package Type DFN
View Details
Transistor - 32478646 - Radwell International
Fuji Electric Corp. of America
Transistor
2SK996
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1371E-AE - 855032-2SA1371E-AE - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1371E-AE
2SA1371E-AE
Specs
Package Type SOT3
View Details
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY - ALD111933SAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY
ALD111933SAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers