ODG (Origin Data Global) Single FETs, MOSFETs EPC8002

The EPC8002 is an enhancement mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency power conversion applications. It is supplied in a passivated die form with solder bars and has a die size of 2.1 x 0.85 mm. The device features a drain-to-source voltage rating of 65 V, a continuous drain current of 2 A at 25°C, and a typical on-resistance of 480 mΩ at 5 V gate voltage. Gate-to-source voltage ranges from -4 V to 6 V, and the operating junction temperature extends from -40°C to 150°C. Thermal resistance from junction to case is 8.2°C/W and junction to board is 16°C/W. The part meets MSL 1 moisture sensitivity level per IPC/JEDEC standards and incorporates a lateral structure with no reverse recovery charge. It is compliant with RoHS.