ODG (Origin Data Global) Single FETs, MOSFETs EPC2215

The EPC2215 is an enhancement mode gallium nitride (GaN) power transistor designed for high-efficiency switching applications such as DC-DC converters, wireless power, and motor drives. It is supplied in a passivated die form with solder bars, measuring 4.6 x 1.6 mm. The device has a drain-source voltage rating of 200 V and a maximum continuous drain current of 32 A at 25°C, with a typical drain-source on-resistance of 8 mΩ. The gate-source voltage range is -4 V to 6 V, and the operating junction temperature ranges from -40°C to 150°C. Thermal resistance from junction to case is 0.5°C/W, and junction-to-ambient thermal resistance is 52°C/W on a one-square-inch copper pad. The device exhibits zero reverse recovery charge and ultra-low gate charge. No package or qualification standards beyond the die form are specified.