The EPC2204A is an automotive-grade enhancement mode gallium nitride (GaN) FET designed for high-efficiency power conversion applications, including DC-DC converters, automotive LiDAR, and USB-C power delivery. It is supplied in a passivated die form with solder bars and has a die size of 2.5 x 1.5 mm. The device features a maximum drain-to-source voltage of 80 V, a drain current of 29 A at 25°C, and a maximum on-resistance of 6 mΩ at 16 A and 5 V gate drive. It operates with a gate voltage range of -4 V to 6 V and supports junction temperatures from -40°C to 150°C. The FET has zero reverse recovery charge, ultra-low gate charge, and a thermal resistance from junction-to-case of 1 °C/W. It meets AEC-Q101 qualification standards and is rated for moisture sensitivity level 1 per IPC/JEDEC standards.
TRANS GAN 80V .006OHM AECQ101
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2204A |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 80 volts |