The EPC2203 is an automotive-grade enhancement mode gallium nitride (eGaN®) FET designed for high-efficiency power conversion applications, including lidar, wireless power, and DC-DC converters. It is supplied in a passivated die form with solder bumps, measuring 0.9 mm × 0.9 mm. The device has a continuous drain current rating of 1.7 A and a drain-to-source breakdown voltage of 80 V with an on-state resistance of 53-80 mΩ at 25°C. It is qualified to AEC-Q101 and operates over a junction temperature range of -40°C to 150°C.
GANFET N-CH 80V 1.7A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2203 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 80 volts |
