The EPC2202 is an automotive-grade 80 V enhancement mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency power conversion applications. It is supplied in a passivated die form with solder bars and has a die size of 2.1 mm × 1.6 mm. The device has a continuous drain current of 18 A and a maximum drain-to-source on-resistance of 17 mΩ at 25°C. It supports a gate-to-source voltage range of -4 V to 5.75 V and operates from -40°C to 150°C. Thermal resistance values are 2°C/W junction-to-case and 4°C/W junction-to-board. The part meets AEC-Q101 qualification standards and is moisture sensitivity level 1 per IPC/JEDEC. It features low gate charge (4 nC typical), zero reverse recovery charge, and low output capacitance for fast switching performance.
GANFET N-CH 80V 18A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2202 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 80 volts |
