The EPC2103 is an enhancement-mode gallium nitride (GaN) half-bridge power transistor for high-frequency DC-DC and motor drive applications. It is supplied as a passivated die with solder bumps, measuring 6.05 mm x 2.3 mm. The device has an 80 V drain-to-source voltage rating and a continuous drain current of 30 A at 25°C. On-state resistance is 5.5 mΩ at VGS = 5 V and ID = 20 A. Gate-to-source voltage ranges from -4 V to 6 V. Thermal resistance is 0.3 °C/W from junction to case and 2.2 °C/W to board. Zero reverse recovery charge is exhibited. Operating junction temperature ranges from -40°C to 150°C. It meets moisture sensitivity level 1 per IPC/JEDEC and is RoHS compliant.
GAN TRANS SYMMETRICAL HALF BRIDG
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2103 |
| Product Name | FET, MOSFET Arrays |
| Polarity | N-Channel; 2 N-Channel (Half Bridge) |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 80 volts |
