The EPC2071 is an enhancement mode gallium nitride (GaN) power transistor for high-frequency switching applications, including 48 V DC-DC converters and BLDC motor drives. It is supplied as a passivated die with solder bars and measures 4.45 x 2.3 mm. The device has a 100 V drain-to-source voltage rating and a continuous drain current of 64 A at 25°C. Its typical on-resistance is 1.7 mΩ at 5 V gate drive. Gate threshold voltage ranges from 0.7 V to 2.5 V, with gate-to-source voltage limits of -4 V to 6 V. Junction-to-case thermal resistance is 0.4 °C/W and junction-to-board is 1.5 °C/W. Reverse recovery charge is zero. Operating junction temperature is -40°C to 150°C. The top of the die is electrically connected to the source.
TRANS GAN 100V .0022OHM 21BMPD
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2071 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 100 volts |