The EPC2034C is an enhancement mode gallium nitride (GaN) power transistor designed for high-frequency switching applications such as DC/DC conversion and wireless power transfer. It is supplied in a passivated die form with solder bumps and has a die size of 4.6 x 2.6 mm. The device supports a continuous drain current of 48 A at 25°C and a maximum drain-to-source voltage of 200 V. The typical on-resistance is 8 mΩ at a gate-source voltage of 5 V and a drain current of 20 A. Gate drive requires 0 V for off and 5 V typical for on, with no negative bias needed. Thermal resistance from junction to case is 0.3 °C/W and junction to board is 4 °C/W. The part meets MSL 1 moisture sensitivity level requirements per IPC/JEDEC standards.
GANFET N-CH 200V 48A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2034C |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 200 volts |
