ODG (Origin Data Global) Single FETs, MOSFETs EPC2032

The EPC2032 is an enhancement mode gallium nitride (GaN) power FET designed for high-frequency switching applications such as DC-DC conversion, motor drives, and synchronous rectification. It is supplied in a passivated die form with solder bumps, measuring 4.6 mm × 2.6 mm. The device has a continuous drain-to-source voltage rating of 100 V and a continuous drain current of 48 A at 25°C. Its drain-source on-resistance is 4 mΩ at 5 V gate-source voltage and 30 A drain current. Thermal resistance from junction to case is 0.45°C/W and junction to board is 3.9°C/W. Maximum junction and storage temperatures range from -40°C to 150°C. The FET is manufactured without a traditional package and requires direct mounting on a PCB.