The EPC2031 is an enhancement mode gallium nitride (GaN) power FET designed for high-frequency switching applications such as DC-DC conversion, motor drive, and synchronous rectification. It is supplied in a passivated die form with solder bumps, measuring 4.6 mm by 2.6 mm. The device has a continuous drain-to-source voltage rating of 60 V and a maximum drain current of 48 A at 25°C. Its on-state resistance is 2.6 mΩ at a gate-source voltage of 5 V and drain current of 30 A. Thermal resistance from junction to case is 0.45°C/W and junction to board is 3.9°C/W. The FET has zero reverse recovery charge and a gate threshold voltage range of 0.8 to 2.5 V. It operates from -40°C to 150°C and meets moisture sensitivity level 1 per IPC/JEDEC standards.
GANFET NCH 60V 31A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2031 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 60 volts |
