The EPC2029 is an enhancement mode gallium nitride (GaN) power FET designed for high-efficiency switching applications such as DC-DC conversion, motor drive, and synchronous rectification. It is supplied in a passivated die form with solder bumps, measuring 4.6 mm by 2.6 mm. The device has a maximum drain-to-source voltage of 80 V and a continuous drain current rating of 48 A at 25°C junction temperature. Its on-state resistance is 3.2 mΩ at 5 V gate-source voltage and 30 A drain current. Thermal resistance from junction to case is 0.45 °C/W and junction to board is 3.9 °C/W. Operating and storage junction temperatures range from -40°C to 150°C. The part is classified as MSL 1 per IPC/JEDEC standards and meets RoHS requirements.
GANFET N-CH 80V 48A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2029 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 80 volts |
