The EPC2019 is an enhancement mode gallium nitride (GaN) power FET for high-frequency power conversion, supplied as a passivated die with solder bars measuring 2.77 mm by 0.95 mm. It has a 200 V drain-to-source voltage rating and a continuous drain current of 8.5 A at 25°C. Its maximum drain-source on-resistance is 42 mΩ at 5 V gate drive, with a gate threshold voltage of 0.8 V to 2.5 V. Thermal resistance is 2.7 °C/W from junction to case and 7.5 °C/W from junction to board. The operating and storage temperature range is -40°C to 150°C. Gate drive requires 5 V on and 0 V off; negative bias is not needed. The device meets IPC/JEDEC moisture sensitivity level 1.
GANFET N-CH 200V 8.5A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2019 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 200 volts |
