The EPC2016C is an enhancement-mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency power conversion applications. It is supplied in a passivated die form with solder bars, measuring 2.1 x 1.6 mm. The device has a continuous drain-to-source voltage rating of 100 V and a maximum drain current of 18 A at 25°C. Its drain-source on-resistance is 16 mΩ typical at 11 A and 5 V gate-source voltage. Thermal resistance from junction to case is 2°C/W and junction to board is 4°C/W. It operates with a junction temperature range of -40°C to 150°C. The device meets MSL 1 moisture sensitivity level according to IPC/JEDEC standards.
GANFET N-CH 100V 18A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2016C |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 100 volts |
