The EPC2014C is an enhancement mode gallium nitride (GaN) field-effect transistor designed for high-frequency power conversion applications, including DC-DC conversion, wireless power transfer, and LiDAR. It is supplied in a passivated die form with solder bumps and has a drain-to-source voltage rating of 40 V and a continuous drain current of 10 A. The on-resistance is 16 mΩ at 25°C with a gate-to-source voltage of 5 V. Thermal resistance from junction to case is 3.6 °C/W and from junction to board is 9.3 °C/W. The device operates from -40°C to 150°C and meets MSL 1 moisture sensitivity level per IPC/JEDEC standards. It complies with RoHS specifications. The die dimensions are 1702 × 1087 µm, with a pad layout of five terminals: gate, substrate, drain (×2), and source. The substrate must be connected to the source.
GANFET N-CH 40V 10A DIE OUTLINE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2014C |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 40 volts |
