ODG (Origin Data Global) Single FETs, MOSFETs EPC2001C

The EPC2001C is an enhancement mode gallium nitride FET for high-frequency power conversion, supplied as a passivated die with solder bars and a die size of 4.1 x 1.6 mm. It supports a 100 V drain-to-source voltage and 36 A continuous drain current at 25°C. Its typical on-resistance is 7 mΩ at V_{GS} = 5 V. Thermal resistance is 1 °C/W from junction to case and 54 °C/W from junction to ambient on a 1 in² copper pad. The gate drive requires 5-5.25 V for turn-on and 0 V for turn-off, with no negative bias needed. It has zero reverse recovery charge, low switching losses, and operates from -40°C to 150°C. It meets MSL 1 moisture sensitivity per IPC/JEDEC.