onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - USB10H USB10H

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 052067-USB10H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.2nC @ 4.5V
Max Input Capacitance: 441pF @ 10V
Maximum Rds On at Id,Vgs: 170 mOhm @ 1.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Small Signal Field-Effect Transistor, 1.9A, 20V, 2-Element, P-Channel, MOSFET

Mosfet Array 2 P-Channel (Dual) 20V 1.9A 700mW Surface Mount SuperSOT™-6

MOSFET 2P-CH 20V 1.9A SSOT6 Product overview: USB10H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-USB10H can be used for catalog matching and distributor lookup.