onsemi Single FETs, MOSFETs UJ3C120080K3S

The UJ3C120080K3S is a silicon carbide cascode JFET in a TO247-3 package measuring 15.90x20.96x5.03 mm, designed for high-efficiency switching applications such as EV charging, PV inverters, and motor drives. It features a 1200 V drain-source voltage rating, a typical on-resistance of 80 mΩ at 25°C, and a maximum junction temperature of 175°C. The device offers low gate charge (51 nC), ultra-low reverse recovery charge (180 nC), and is ESD protected with HBM Class 2 and CDM Class C3. It is RoHS compliant, Pb-free, and halogen-free.