onsemi Single FETs, MOSFETs UF4C120053K3S

The UF4C120053K3S is a 1200 V, 53 mΩ silicon carbide cascode FET in a TO247-3 package measuring 15.90x20.96x5.03 mm. It features a maximum junction temperature of 175 °C, a gate threshold voltage of 4.8 V (typical), a total gate charge of 37.8 nC, and reverse recovery charge of 117 nC at 25 °C. The device is RoHS compliant, Pb-free, and halogen-free, with HBM Class 2 and CDM Class C3 ESD protection. It is designed for switching inductive loads in applications such as EV charging, PV inverters, and motor drives.