onsemi Single FETs, MOSFETs UF3C120150K4S

The UF3C120150K4S is a silicon carbide (SiC) cascode JFET designed for high-efficiency switching in applications such as EV charging, PV inverters, and motor drives. It is packaged in a TO-247-4 case measuring 15.90 x 20.96 x 5.03 mm with a pin pitch of 5.44 mm. The device has a drain-source voltage rating of 1200 V, a continuous drain current of 18.4 A at TC = 25 °C, and a maximum junction temperature of 175 °C. It features a typical on-resistance of 150 mΩ at 25 °C, low gate charge of 25.7 nC, and excellent reverse recovery characteristics with a Qrr of 67 nC. The device is RoHS compliant and ESD protected (HBM Class 2).